Secondary cracking at grain boundaries in silicon thin films

نویسندگان

  • Jin Chen
  • Yu Qiao
چکیده

In this article, we report irregular cleavage front transmission at grain boundaries in free-standing polysilicon thin films. When the orientations of two adjacent grains are correlated, the crack may bypass the boundary via a ‘‘tunneling’’ process. Similar behavior can also be achieved if the crack path curves in the grain-boundary-affected zone. Moreover, the separation of crack flanks can be aided by secondary cracking. These irregular modes of crack front behavior tend to lower the effective boundary toughness. 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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تاریخ انتشار 2007